
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 9
Freescale Semiconductor 11
3 Electrical Characteristics
This section provides the device-level and module-level electrical characteristics for the i.MX25.
3.1 i.MX25 Chip-Level Conditions
This section provides the chip-level electrical characteristics for the IC.
3.1.1 DC Absolute Maximum Ratings
Table 5 provides the DC absolute maximum operating conditions.
CAUTION
• Stresses beyond those listed under Table 5 may cause permanent
damage to the device.
• Exposure to absolute-maximum-rated conditions for extended periods
may affect device reliability.
• Table 5 gives stress ratings only—functional operation of the device is
not implied beyond the conditions indicated in Table 6.
3.1.2 DC Operating Conditions
Table 6 provides the DC recommended operating conditions.
Table 5. DC Absolute Maximum Ratings
Parameter Symbol Min. Max. Units
Supply voltage QV
DD
–0.5 1.52 V
Supply voltage (level shift i/o) V
DDIOmax
–0.5 3.6 V
ESD damage immunity: V
esd
V
Human body model (HBM) — 2500
Charge device model (CDM) — 400
Machine model (MM) — 200
Input voltage range V
Imax
–0.5 NV
DD
+ 0.3 V
Storage temperature range T
storage
–40 105
o
C
Table 6. DC Operating Conditions
Parameter Symbol Min. Typ. Max. Units
Core supply voltage (at 266 MHz) QV
DD
1.15 1.34 1.52 V
Core supply voltage (at 400 MHz) QV
DD
1.38 1.45 1.52 V
Coin battery
1
BAT_VDD
V
DD_BAT
1.15 — 1.55 V
I/O supply voltage, GPIO
NFC,CSI,SDIO
NV
DD_GPIO1
1.75 — 3.6 V
Comentarios a estos manuales